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1. Identity statement
Reference TypeConference Paper (Conference Proceedings)
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/43L92PB
Repositorysid.inpe.br/mtc-m21c/2020/11.23.11.03
Metadata Repositorysid.inpe.br/mtc-m21c/2020/11.23.11.03.38
Metadata Last Update2022:01.04.01.35.38 (UTC) administrator
Secondary KeyINPE--PRE/
Citation KeyCostaFoBoPeAbSoRa:2020:ShHaOs
TitleShubnikov-de Haas Oscillations p-type PbTe Quantum Wells under illumination
Year2020
Access Date2024, May 18
Secondary TypePRE CN
2. Context
Author1 Costa, I. F.
2 Fonseca, L. M. B. da
3 Bolagños, K.
4 Peres, M. L.
5 Abramof, Eduardo
6 Soares, A. W.
7 Rappl, Paulo Henrique de Oliveira
Resume Identifier1
2
3
4
5 8JMKD3MGP5W/3C9JGUH
6
7 8JMKD3MGP5W/3C9JJ37
Group1
2
3
4
5 LABAS-COCTE-INPE-MCTIC-GOV-BR
6
7 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1 Universidade Federal de Itajubá (UNIFEI)
2 Universidade Federal de Itajubá (UNIFEI)
3 Universidade Federal de Itajubá (UNIFEI)
4 Universidade Federal de Itajubá (UNIFEI)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Universidade Federal de Itajubá (UNIFEI)
7 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2
3
4
5 eduardo.abramof@inpe.br
6
7 paulo.rappl@inpe.br
Conference NameEncontro de Outono Sociedade Brasileira de Física
Conference LocationOnline
Date23 a 26 nov.
History (UTC)2020-11-23 11:03:38 :: simone -> administrator ::
2022-01-04 01:35:38 :: administrator -> simone :: 2020
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
AbstractThe lead telluride is a narrow gap semiconductor which the Fermi surface is composed by four equivalent ellipsoids of revolution with their axis along the <111> direction, responsible for its strong anisotropic of electronic masses. Those properties play an important role in the electronic transport in presence of the magnetic field [1]. Also, the narrow gap of PbTe allows this material to be used in the fabrication of infrared devices [2]. In this work, we present magnetoresistance (MR) measurements in p-type PbTe quantum wells (QW) with 8nm and 10nm width for magnetic field up to 9 T and for temperatures varying from 1.9 K to 50 K. Samples were grown using the molecular bean epitaxial technique providing high quality samples with high mobility. From our experimental curves we could observed very clear Shubnikov-de Haas Oscillations for the second-derivative of longitudinal component 𝑅𝑥𝑥 and transversal 𝑅𝑥𝑦 of the electrical resistance. The analysis of the experimental curves using Fast Fourier Transform (FFT) allowed us to obtain the cyclotronic masses and the carrier concentrations. Also, from Hall measurements, it was possible to compare the transport parameters obtained from the MR curves. By deriving the energy levels in the QW´s and calculating the Fermi energy, we found that only the first longitudinal valley is occupied. We also observed a splitting in the FFT curves that are not related to other valley contributions. We suggest that the Rashba effect is responsible for this effect due to the splitting of the Fermi surface energy [3].
AreaFISMAT
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Visibilityshown
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
Host Collectionurlib.net/www/2017/11.22.19.04
6. Notes
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